Infineon Technologies IPP014N06NF2S
60V MOSFET
FEATURES
● Optimized for wide range of applications● N‑channel, normal level
● 100% avalanche tested
● Pb‑free lead plating; RoHS compliant
● Halogen‑free according to IEC61249‑2‑21 Product validation Qualified according to JEDEC Standard Table 1 Parameter VDS RDS(on),max ID Qoss QG(0V..10V) Key Performance Parameters Value Unit 60 V 1.4 mΩ 200 A 200 nC 203 nC PG‑TO220‑3 Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/Ordering Code IPP014N06NF2S Package PG‑TO220‑3 Marking 014N06NS Related Links ‑ Datasheet 1 Revision 2.3 2024‑10‑07 Public StrongIRFET™2 Power‑Transistor, 60 V IPP014N06NF2S Table of Contents
DESCRIPTION
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .