900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Infineon Technologies Electronic Components Datasheet

IPP020N06N Datasheet

Power-Transistor

No Preview Available !

Type
OptiMOSTM Power-Transistor
Features
• Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
IPP020N06N
Product Summary
VDS
RDS(on),max
ID
QOSS
QG(0V..10V)
60 V
2.0 mW
120 A
119 nC
106 nC
PG-TO220-3
Type
IPP020N06N
Package
PG-TO220-3
Marking
020N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
120 A
120
V GS=10 V, T C=25 °C,
R thJA =50K/W
29
Pulsed drain current2)
I D,pulse T C=25 °C
480
Avalanche energy, single pulse3) E AS I D=100 A, R GS=25 W
420 mJ
Gate source voltage
V GS
±20 V
1) J-STD20 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev.2.3
page 1
2012-12-20


Infineon Technologies Electronic Components Datasheet

IPP020N06N Datasheet

Power-Transistor

No Preview Available !

Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
T A=25 °C,
R thJA=50 K/W
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
IPP020N06N
Value
214
3.0
-55 ... 175
55/175/56
Unit
W
°C
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
R thJC
R thJA
bottom
minimal footprint
6 cm² cooling area4)
-
-
-
- 0.7 K/W
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
60
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=143 µA
2.1
2.8
3.3
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
0.5
1 µA
V DS=60 V, V GS=0 V,
T j=125 °C
-
10 100
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I GSS
V GS=20 V, V DS=0 V
R DS(on) V GS=10 V, I D=100 A
V GS=6 V, I D=25 A
RG
-
-
-
-
10 100 nA
1.8 2 mW
2.1 3
1.6 2.4 W
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=100 A
100
210
-S
Rev.2.3
page 2
2012-12-20


Part Number IPP020N06N
Description Power-Transistor
Maker Infineon
PDF Download

IPP020N06N Datasheet PDF






Similar Datasheet

1 IPP020N06N Power-Transistor
Infineon
2 IPP020N06N N-Channel MOSFET
INCHANGE





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy