IPP023N10N5 - MOSFET

Features

N-channel, normal level.
Optimized for FOMOSS.
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

IPP023N10N5 mosfet by Infineon - Datasheet Preview

Datasheet Details

Part number	IPP023N10N5
Manufacturer	Infineon
File Size	1.29 MB
Description	MOSFET
Datasheet	IPP023N10N5 Datasheet

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Full PDF Text Transcription

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MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª5Power-Transistor,100V IPP023N10N5 DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSª5Power-Transistor,100V IPP023N10N5 1Description Features •N-channel,normallevel •OptimizedforFOMOSS •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification TO-220-3 tab Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 2.

Published: Feb 13, 2016 |