IPP037N08N3 Datasheet | Infineon

Features - Ideal for high frequency switching and sync. rec. - Optimized technology for DC/DC converters - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance RDS(on) - N-channel, normal level - 100% avalanche tested - Pb-free plating; Ro HS pliant - Qualified according to JEDEC1) for target applications - Halogen-free according to IEC61249-2-21 IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G Product Summary V DS R DS(on),max ID 80 V 3.5 mΩ 100 A Type IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G Package Marking PG-TO220-3 037N08N PG-TO262-3 037N08N PG-TO263-3 035N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche energy, single pulse3) I D,pulse E AS T C=25 °C2) T C=100 °C T C=25 °C I D=100 A, R GS=25 Ω Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Value 100 100 400 510 ±20 214 -55 ... 175 55/175/56 Rev. 2.4 page...