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Infineon Technologies Electronic Components Datasheet

IPP048N06L Datasheet

Power-Transistor

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OptiMOS® Power-Transistor
Features
• For fast switching converters and sync. rectification
• N-channel enhancement - logic level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
IPP048N06L G IPB048N06L G
Product Summary
V DS
R DS(on),max SMDversion
ID
60 V
4.4 m
100 A
Type
IPP048N06L
IPB048N06L
Package
Marking
P-TO220-3-1
048N06L
P-TO263-3-2
048N06L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C1)
Pulsed drain current
I D,pulse
T C=100 °C
T C=25 °C2)
Avalanche energy, single pulse
E AS
I D=100 A, R GS=25
Reverse diode dv /dt
dv /dt
I D=100 A, V DS=48 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1) Current is limited by bondwire; with an RthJC=0.5 the chip is able to carry 161A
2) See figure 3
Rev. 1.11
page 1
Value
100
100
400
810
6
±20
300
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2006-04-20


Infineon Technologies Electronic Components Datasheet

IPP048N06L Datasheet

Power-Transistor

No Preview Available !

www.DataSheet4U.com
IPP048N06L G IPB048N06L G
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC
-
SMD version, device on PCB
R thJA minimal footprint
-
6 cm2 cooling area3)
-
-
0.5 K/W
-
62
-
40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
60
-
Gate threshold voltage
V GS(th) V DS=V GS, I D=270 µA
1.2
1.6
-V
2
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
V DS=60 V, V GS=0 V,
T j=125 °C
-
I GSS
V GS=20 V, V DS=0 V
-
R DS(on) V GS=10 V, I D=100 A
-
V GS=4.5 V, I D=66 A
-
V GS=10 V, I D=100 A,
SMD version
V GS=4.5 V, I D=66A,
SMD version
RG
-
g fs
|V DS|>2|I D|R DS(on)max,
I D=100 A
92
0.01
1 µA
1
100
10
100 nA
3.7
4.7 m
4.4
5.7
3.4
4.4
4.1
5.4
1.9
-
183
-S
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.11
page 2
2006-04-20


Part Number IPP048N06L
Description Power-Transistor
Maker Infineon
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IPP048N06L Datasheet PDF






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