Datasheet4U Logo Datasheet4U.com

IPP051N15N5 - MOSFET

General Description

.

.

.

.

Key Features

  • Excellent gate charge x RDS(on) product (FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPP051N15N5 N-Channel MOSFET INCHANGE
IPP051NE8NG Power-Transistor Infineon Technologies
IPP050N06NG Power-Transistor Infineon Technologies
IPP052N06L3 N-Channel MOSFET INCHANGE
IPP052N06L3G Power-Transistor Infineon Technologies

Other Datasheets by Infineon

Part Number Description
IPP050N03LF2S MOSFET
IPP050N06N Power-Transistor
IPP052N06L3 Power-Transistor
IPP052N08N5 MOSFET
IPP052NE7N3 Power-Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IPP051N15N5 MOSFET OptiMOSª5Power-Transistor,150V Features •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 150 V RDS(on),max(TO220) 5.1 mΩ ID 120 A TO-220-3 tab Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPP051N15N5 Package PG-TO220-3 Marking 051N15N5 RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.0,2016-02-01 OptiMOSª5Power-Transistor,150V IPP051N15N5 TableofContents Description . . . . . . .