IPP055N03L Datasheet | Infineon

Features - Fast switching MOSFET for SMPS - Optimized technology for DC/DC converters - Qualified according to JEDEC1) for target applications - N-channel, logic level - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance R DS(on) - Avalanche rated - Pb-free plating; Ro HS pliant - Halogen-free according to IEC61249-2-21 Type IPP055N03L G IPB055N03L G Product Summary V DS R DS(on),max ID IPP055N03L G IPB055N03L G 30 V 5.5 mΩ 50 A Package PG-TO220-3-1 PG-TO263-3 Marking 055N03L 055N03L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage 1) J-STD20 and JESD22 Rev. 1.04 I D,pulse I AS E AS dv /dt V GS V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C T C=25 °C T C=25 °C I D=35 A, R GS=25 Ω I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C page 1 Value 50 50 50 50 350 50...