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IPP076N12N3G - Power-Transistor

Infineon

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Datasheet Details

Part number: IPP076N12N3G
Manufacturer: Infineon ↗
File Size: 483.78 KB
Datasheet: IPP076N12N3G-Infineon.pdf
Description: Power-Transistor

IPP076N12N3G Product details

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary VDS RDS(on)max ID.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant; halogen free.
Qualified according to JEDEC1) for target application.
Ideal for high-frequency switching and synchronous rectification 120 V 7.6 mW 100 A Type IPI076N12N3 G IPP076N12N3 G Package Marking PG-TO262-3 076N.

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