IPP076N12N3G
IPP076N12N3G is Power-Transistor manufactured by Infineon.
IPI076N12N3 G IPP076N12N3 G
Opti MOSTM3 Power-Transistor
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
Product Summary VDS RDS(on)max ID
- 175 °C operating temperature
- Pb-free lead plating; Ro HS pliant; halogen free
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
120 V 7.6 m W 100 A
Type
IPI076N12N3 G
IPP076N12N3 G
Package Marking
PG-TO262-3 076N12N
PG-TO220-3 076N12N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=100 A, R GS=25 W
Gate source voltage3)
V...
