IPP114N12N3G Description
OptiMOSTM3 Power-Transistor.
IPP114N12N3G Key Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant; halogen free
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification