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Infineon Technologies Electronic Components Datasheet

IPP114N12N3G Datasheet

Power-Transistor

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OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
VDS
RDS(on)max
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant; halogen free
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPP114N12N3 G
IPP114N12N3 G
120 V
11.4 mΩ
75 A
Package
Marking
PG-TO220-3
114N12N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
ID
I D,pulse
T C=25 °C
T C=100 °C
T C=25 °C
Avalanche energy, single pulse
E AS I D=75 A, R GS=25 Ω
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) see figure 3
3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V
Value
75
53
300
120
±20
136
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 2.4
page 1
2011-11-25


Infineon Technologies Electronic Components Datasheet

IPP114N12N3G Datasheet

Power-Transistor

No Preview Available !

Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R thJC
R thJA
minimal footprint
6 cm2 cooling area4)
IPP114N12N3 G
min.
Values
typ.
Unit
max.
- - 1.1 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=83 µA
I DSS
V DS=100 V, V GS=0 V,
T j=25 °C
120
2
-
-
3
0.1
-V
4
1 µA
Gate-source leakage current
I GSS
V DS=100 V, V GS=0 V,
T j=125 °C
V GS=20 V, V DS=0 V
-
-
10 100
1 100 nA
Drain-source on-state resistance
R DS(on) V GS=10 V, I D=75 A
- 9.8 11.4
Gate resistance
Transconductance
RG -
g fs
|V DS|>2|I D|R DS(on)max,
I D=75 A
40
1.5
80
-Ω
-S
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.4
page 2
2011-11-25


Part Number IPP114N12N3G
Description Power-Transistor
Maker Infineon
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IPP114N12N3G Datasheet PDF






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