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Infineon Technologies Electronic Components Datasheet

IPP50R140CP Datasheet

Power Transistor

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CoolMOSTM Power Transistor
Features
• Worldwide best R DS ,on in TO220
• Lowest figure of merit RON x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS compliant
• Quailfied according to JEDEC1) for target applications
Product Summary
V DS @Tjmax
R DS(on),max
Q g,typ
IPP50R140CP
550 V
0.140
48 nC
PG-TO220
CoolMOS CP is designed for:
• Hard & soft switching SMPS topologies
• CCM PFC for ATX, Notebookadapter & PDP and LCD TV
• PWM Stages for Server, Adapter
Type
IPP50R140CP
Package
PG-TO220
Marking
5R140P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
ID
I D,pulse
T C=25 °C
T C=100 °C
T C=25 °C
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
E AS
E AR
I AR
dv /dt
I D=9.3 A, V DD=50 V
I D=9.3 A, V DD=50 V
V DS=0...400 V
Gate source voltage
V GS static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
Mounting torque
M3 and M3.5 screws
Rev. 2.0
page 1
Value
23
15
56
616
0.93
9.3
50
±20
±30
192
-55 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2007-11-06


Infineon Technologies Electronic Components Datasheet

IPP50R140CP Datasheet

Power Transistor

No Preview Available !

Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
IPP50R140CP
Value
14
56
15
Unit
A
V/ns
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R thJC
R thJA
leaded
Soldering temperature,
wavesoldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10 s
min.
Values
typ.
Unit
max.
- - 0.65 K/W
- - 62
- - 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
500
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=0.93 mA 2.5 3 3.5
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I DSS
V DS=500 V, V GS=0 V,
T j=25 °C
V DS=500 V, V GS=0 V,
T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=14 A,
T j=25 °C
V GS=10 V, I D=14 A,
T j=150 °C
R G f =1 MHz, open drain
-
-
-
-
-
-
- 2 µA
20 -
- 100 nA
0.13 0.14
0.32
2.2
-
-
Rev. 2.0
page 2
2007-11-06


Part Number IPP50R140CP
Description Power Transistor
Maker Infineon
PDF Download

IPP50R140CP Datasheet PDF





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