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Infineon Technologies Electronic Components Datasheet

IPP50R520CP Datasheet

Power Transistor

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CoolMOSTM Power Transistor
Features
• Lowest figure of merit RON x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS compliant
• Quailfied according to JEDEC1) for target applications
Product Summary
V DS @Tjmax
R DS(on),max
Q g,typ
IPP50R520CP
550 V
0.520
13 nC
PG-TO220
CoolMOS CP is designed for:
• Hard- & Softswitching SMPS topologies
• DCM PFC for Lamp Ballast
• PWM for Lamp Ballast, PDP and LCD TV
Type
IPP50R520CP
Package
PG-TO220
Marking
5R520P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
Gate source voltage
I D,pulse
E AS
E AR
I AR
dv /dt
V GS
T C=100 °C
T C=25 °C
I D=2.5 A, V DD=50 V
I D=2.5 A, V DD=50 V
V DS=0...400 V
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
Mounting torque
M3 and M3.5 screws
Rev. 2.0
page 1
Value
7.1
4.5
15
166
0.25
2.5
50
±20
±30
66
-55 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2007-11-06


Infineon Technologies Electronic Components Datasheet

IPP50R520CP Datasheet

Power Transistor

No Preview Available !

Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
IPP50R520CP
Value
3.8
15
15
Unit
A
V/ns
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R thJC
R thJA
leaded
Soldering temperature,
wavesoldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10 s
min.
Values
typ.
Unit
max.
- - 1.9 K/W
- - 62
- - 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
500
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=0.25 mA 2.5 3 3.5
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I DSS
V DS=500 V, V GS=0 V,
T j=25 °C
V DS=500 V, V GS=0 V,
T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=3.8 A,
T j=25 °C
V GS=10 V, I D=3.8 A,
T j=150 °C
R G f =1 MHz, open drain
-
-
-
-
-
-
- 1 µA
10 -
- 100 nA
0.47 0.52
1.2 -
2.2 -
Rev. 2.0
page 2
2007-11-06


Part Number IPP50R520CP
Description Power Transistor
Maker Infineon
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IPP50R520CP Datasheet PDF





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