Download IPS110N12N3G Datasheet PDF
IPS110N12N3G page 2
Page 2
IPS110N12N3G page 3
Page 3

IPS110N12N3G Key Features

  • N-channel, normal level
  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance R DS(on)
  • 175 °C operating temperature
  • Pb-free lead plating; RoHS pliant
  • Qualified according to JEDEC1) for target application
  • Halogen free according to IEC61249-2-21
  • Ideal for high-frequency switching and synchronous rectification
  • Except package TO251-3
  • 1.1 K/W

IPS110N12N3G Description

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,120V OptiMOS™3Power-Transistor IPD_S110N12N3G DataSheet Rev.2.4 Final Industrial&Multimarket OptiMOSTM3Power-Transistor.