IPS80R1K4P7
IPS80R1K4P7 is MOSFET manufactured by Infineon.
MOSFET
800VCool MOSªP7Power Transistor
Thelatest800VCool MOS™P7seriessetsanewbenchmarkin800V superjunctiontechnologiesandbinesbest-in-classperformancewith stateoftheartease-of-use,resultingfrom Infineon’sover18years pioneeringsuperjunctiontechnologyinnovation.
Features
- Best-in-class FOMRDS(on)- Eoss;reduced Qg,Ciss,and Coss
- Best-in-class DPAKRDS(on)
- Best-in-class V(GS)thof3Vandsmallest V(GS)thvariationof±0.5V
- Integrated Zener Diode ESDprotection
- Fullyqualifiedacc.JEDECfor Industrial Applications
- Fullyoptimizedportfolio
Benefits
- Best-in-classperformance
- Enablinghigherpowerdensitydesigns,BOMsavingsandlower assemblycosts
- Easytodriveandtoparallel
- Betterproductionyieldbyreducing ESDrelatedfailures
- Lessproductionissuesandreducedfieldreturns
- Easytoselectrightpartsforfinetuningofdesigns
Potentialapplications
Remendedforhardandsoftswitchingflybacktopologiesfor LED Lighting,lowpower Chargersand Adapters,Audio,AUXpowerand Industrialpower.Alsosuitablefor PFCstagein Consumerapplications and Solar.
Pleasenote:For MOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyremended.
Table1Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj=25°C
RDS(on),max
Ω
Qg,typ
10 n C
ID 4...
