Description
Sheet 2 Rev.2.0,2022-09-27 OptiMOSTM5Power-Transistor,60V IPTC007N06NM5 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) ID Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage Power dissipation Operating and storage temperature ID,pulse EAS VGS Ptot Tj,Tstg Min. 454 - 348 - 321 - 52 - 1816 - 1100 - 20 - 375 - 3.8 - 175 Unit Note/TestCondition VGS=10V,TC=25°C A VGS=10V,TC=100°C VGS=6V,TC=100°C VGS=10V,TA=25°C,RthJA=40°C/W2) A TA=25°C mJ ID=150A,RGS=25Ω V- W TC=25°C TA=25°C,RthJA=40°C/W2) °C - 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol - case, top RthJC Thermal characterization parameter, junction to lead (Pin 1-7)5) ΨJL Thermal characterization parameter, junction to lead (Pin 9-16)5) ΨJL Values Unit Note/TestCondition Min.
Key Features
- Optimizedformotordrivesandbatterypoweredapplications
- Optimizedfortopsidecooling
- Highcurrentcapability
- 175°Crated
- 100%avalanchetested
- Superiorthermalperformance
- Pb-freeleadplating;RoHScompliant
