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Infineon Technologies Electronic Components Datasheet

IRFB38N20D Datasheet

Power MOSFET

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Applications
High frequency DC-DC converters
Plasma Display Panel
Benefits
Low Gate-to-Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSS
to Simplify Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current
Lead-Free
IRFB38N20DPbF
IRFS38N20DPbF
IRFSL38N20DPbF
HEXFET® Power MOSFET
Key Parameters
VDS
200
V
VDS(Avalanche) min.
RDS(on) max @ 10V
TJ max
260
V
54
m
175
°C
D
D
D
GDS
S
G
TO-220AB
D2 Pak
IRFB38N20DPbF IRFS38N20DPbF
S
GD
TO-262 Pak
IRFSL38N20DPbF
G
Gate
D
Drain
S
Source
Base part number
IRFB38N20DPbF
IRFSL38N20DPbF
IRFS38N20DPbF
Package Type
TO-220
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRFB38N20DPbF
IRFSL38N20DPbF
IRFS38N20DPbF
IRFS38N20DTRLPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
43*
30*
180
3.8
300*
2.0*
± 30
9.5
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
Parameter
RJC
RCS
RJA
RJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient ( PCB Mount, steady state)
Typ.
–––
0.50
–––
–––
Max.
0.47*
–––
62
40
Units
°C/W
* RJC (end of life) for D2Pak and TO-262 = 0.50°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wear out of the die attach medium.
Notes through are on page 2.
1
2016-5-31


Infineon Technologies Electronic Components Datasheet

IRFB38N20D Datasheet

Power MOSFET

No Preview Available !

IRFB/S/SL38N20DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Forward Trans conductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
200
–––
–––
3.0
–––
–––
–––
–––
Typ.
–––
0.22
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
–––
0.054
5.0
25
250
100
-100
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
 VGS = 10V, ID = 26A
V VDS = VGS, ID = 250µA
µA
VDS =200 V, VGS = 0V
VDS = 160V,VGS = 0V,TJ =150°C
nA
VGS = 30V
VGS = -30V
17 ––– –––
––– 60 91
––– 17 25
––– 28 42
––– 16 –––
––– 95 –––
––– 29 –––
––– 47 –––
––– 2900 –––
––– 450 –––
––– 73 –––
––– 3550 –––
––– 180 –––
––– 380 –––
S VDS = 50V, ID = 26A
ID = 26A
nC VDS = 100V
VGS = 10V
VDD = 100V
ns
ID =26A
RG= 2.5
VGS = 10V
VGS = 0V
VDS = 25V
pF
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V ƒ = 1.0MHz
VGS = 0V, VDS = 160V ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 160V
Avalanche Characteristics
Parameter
EAS
IAR
EAR
VDS (Avalanche)
Single Pulse Avalanche Energy 
Avalanche Current
Repetitive Avalanche Energy
Repetitive Avalanche Voltage
Min.
–––
–––
–––
260
Typ.
–––
–––
390
–––
Max.
460
26
–––
–––
Units
mJ
A
mJ
V
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 44
––– ––– 180
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
––– ––– 1.5
––– 160 240
V TJ = 25°C,IS = 26A,VGS = 0V 
ns TJ = 25°C ,IF = 26A
––– 1.3 2.0 C di/dt = 100A/µs 
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
starting TJ = 25°C, L = 1.3mH, RG = 25, IAS = 26A.
ISD 26A, di/dt 390A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 300µs; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
This is only applied to TO-220AB package.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994.
2
2016-5-31


Part Number IRFB38N20D
Description Power MOSFET
Maker Infineon
PDF Download

IRFB38N20D Datasheet PDF






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