IRFI3205PbF Datasheet | Infineon

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in mercial-industrial applications. The moulding pound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. G Gate TO-220 Full-Pak D Drain S Source Base Part Number IRFI3205Pb F Package Type TO-220 Full-Pak Standard Pack Form Quantity Tube Orderable Part Number IRFI3205Pb F Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited)  Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Max. 64 45 390 63 0.42 ± 20 480 59 6.3 5.0 -55 to + 175 300 10 lbf- in (1.1N- m) Units W W/°C V m J A m J V/ns   °C      Thermal Resistance   Symbol RJC Junction-to-Case RJA Junction-to-Ambient...