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IRFI4227PBF - Power MOSFET

General Description

This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels.

Key Features

  • Advanced Process Technology.
  • Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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  Features  Advanced Process Technology  Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications  Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications  Low QG for Fast Response  High Repetitive Peak Current Capability for Reliable Operation  Short Fall & Rise Times for Fast Switching  150°C Operating Junction Temperature for Improved Ruggedness  Repetitive Avalanche Capability for Robustness and Reliability IRFI4227PbF HEXFET® Power MOSFET Key Parameters VDS max 200 V VDS (Avalanche) typ. 240 V RDS(ON) typ.