IRFI4229
IRFI4229 is Power MOSFET manufactured by Infineon.
- Part of the IRFI4229PbF comparator family.
- Part of the IRFI4229PbF comparator family.
Features
- Advanced Process Technology
- Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
- Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
- Low QG for Fast Response
- High Repetitive Peak Current Capability for
Reliable Operation
- Short Fall & Rise Times for Fast Switching
- 150°C Operating Junction Temperature for Improved Ruggedness
- Repetitive Avalanche Capability for Robustness and Reliability
IRFI4229Pb F
HEXFET® Power MOSFET
Key Parameters
VDS max
VDS (Avalanche) typ.
RDS(ON) typ. @ 10V
38 m
IRP max @ TC= 100°C
TJ max
°C
G Gate
TO-220 Full-Pak
D Drain
S Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 150°C operating junction temperature and high repetitive peak current capability. These features bine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications
Base Part Number IRFI4229Pb F
Package Type TO-220 Full-Pak
Standard Pack
Form
Quantity
Tube
Orderable Part Number IRFI4229Pb F
Absolute Maximum...
