Datasheet Summary
Features
- Advanced Process Technology
- Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
- Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
- Low QG for Fast Response
- High Repetitive Peak Current Capability for Reliable Operation
- Short Fall & Rise Times for Fast Switching
- 150°C Operating Junction Temperature for Improved Ruggedness
- Repetitive Avalanche Capability for Robustness and Reliability
HEXFET® Power MOSFET
Key Parameters
VDS max
250 V
VDS (Avalanche) typ.
300 V
RDS(ON) typ. @ 10V 38 m
IRP max @ TC= 100°C
TJ max
150 °C
G Gate
TO-220...
