IRFU6215PbF Datasheet | Infineon

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. HEXFET® Power MOSFET VDSS RDS(on) -150V 0.295 -13A D- Pak IRFR6215Pb F S GD I- Pak IRFU6215Pb F G Gate D Drain S Source Base part number IRFU6215Pb F IRFR6215Pb F Package Type I-Pak D-Pak Standard Pack Form Tube Tube Tape and Reel Left Quantity 75 75 Orderable Part Number IRFU6215Pb F IRFR6215Pb F IRFR6215TRLPb F Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ -10V ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Max. -13 -9.0 -44 110 0.71 ± 20 310 -6.6 11 5.0 -55 to +...