IRGP4640D-EPbF - Insulated Gate Bipolar Transistor

Infineon

Download the IRGP4640D-EPbF datasheet PDF. This datasheet also covers the IRGS4640DPbF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

E n-channel G Gate E GC IRGS4640DPbF D2Pak GCE E C GCE G GCE IRGSL4640DPbF IRGB4640DPbF IRGP4640DPbF IRGP4640D-EPbF TO-262Pak TO-220AC TO-247AC TO-247AD C Collector E Emitter Benefits Low VCE(ON) and switching losses High efficiency in a wide range of.

📥 Download Datasheet

IRGP4640D-EPbF insulated gate bipolar transistor by Infineon - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IRGS4640DPbF-Infineon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IRGP4640D-EPbF
Manufacturer	Infineon
File Size	752.59 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGP4640D-EPbF Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
IRGP4640D-EPbF	INSULATED GATE BIPOLAR TRANSISTOR	International Rectifier
IRGP4640DPbF	INSULATED GATE BIPOLAR TRANSISTOR	International Rectifier
IRGP4640-EPBF	INSULATED GATE BIPOLAR TRANSISTOR	International Rectifier
IRGP4640PBF	INSULATED GATE BIPOLAR TRANSISTOR	International Rectifier
IRGP4630-EDPbF	Insulated Gate Bipolar Transistor	International Rectifier

Other Datasheets by Infineon

Part Number	Description
IRGP4620D-EPbF	IGBT
IRGP4630D-EPbf	IGBT
IRGP4630DPbf	IGBT
IRGB4620DPbF	IGBT
IRGB4630DPbF	IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

VCES = 600V IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C IC = 40A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C G VCE(ON) typ. = 1.