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Infineon Technologies Electronic Components Datasheet

IRGP4640D-EPbF Datasheet

Insulated Gate Bipolar Transistor

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VCES = 600V
IRGS4640DPbF
IRGSL4640DPbF
IRGB4640DPbF
IRGP4640D(-E)PbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
IC = 40A, TC =100°C
tSC 5µs, TJ(max) = 175°C
G
VCE(ON) typ. = 1.60V @ IC = 24A
Applications
Industrial Motor Drive
Inverters
UPS
Welding
Features
E
n-channel
G
Gate
E
GC
IRGS4640DPbF
D2Pak
GCE
E
C
GCE
G
GCE
IRGSL4640DPbF IRGB4640DPbF IRGP4640DPbF IRGP4640D-EPbF
TO-262Pak
TO-220AC
TO-247AC
TO-247AD
C
Collector
E
Emitter
Benefits
Low VCE(ON) and switching losses
High efficiency in a wide range of applications and switching
Square RBSOA and maximum junction temperature 175°C
Improved reliability due to rugged hard switching
performance and high power capability
Positive VCE (ON) temperature coefficient
Excellent current sharing in parallel operation
5µs Short Circuit SOA
Enables short circuit protection scheme
Lead-Free, RoHS Compliant
Environmentally friendly
Base part number
IRGS4640DPbF
IRGSL4640DPbF
IRGB4640DPbF
IRGP4640DPbF
IRGP4640D-EPbF
Package Type
D2Pak
TO-262
TO-220AB
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Right
800
Tape and Reel Left
800
Tube
50
Tube
50
Tube
25
Tube
25
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate to Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec. (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw (TO-220, TO-247)
Orderable Part Number
IRGS4640DPbF
IRGS4640DTRRPbF
IRGS4640DTRLPbF
IRGSL4640DPbF
IRGB4640DPbF
IRGP4640DPbF
IRGP4640D-EPbF
Max.
600
65
40
72
96
65
40
96
±20
±30
250
125
-55 to +175
300
10 lbf·in (1.1 N·m)
Units
V
A
V
W
C
Notes through are on page 8
1 www.irf.com © 2015 International Rectifier
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January 20, 2015


Infineon Technologies Electronic Components Datasheet

IRGP4640D-EPbF Datasheet

Insulated Gate Bipolar Transistor

No Preview Available !

IRGS/SL/B/P4640D/EPbF
Thermal Resistance
Parameter
Thermal Resistance Junction-to-Case (D2Pak, TO-220, TO-262)
RθJC (IGBT) Thermal Resistance Junction-to-Case (TO-247)
Thermal Resistance Junction-to-Case (D2Pak, TO-220, TO-262)
RθJC (Diode) Thermal Resistance Junction-to-Case (TO-247)
Thermal Resistance, Case-to-Sink (flat, greased surface– TO 220, D2Pak, TO-262)
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface– TO 247)
Thermal Resistance, Junction-to-Ambient (PCB Mount - D2Pak, TO-262)
RθJA Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-247)
Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-220)
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
0.50
0.24
–––
–––
–––
Max. Units
0.60
0.60
1.53
1.62
––– °C/W
–––
40
40
62
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
V(BR)CES
Collector-to-Emitter Breakdown Voltage
ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage
600
0.30
— 1.60
VCE(on)
Collector-to-Emitter Saturation Voltage
— 1.90
— 2.0
VGE(th)
ΔVGE(th)/ΔTJ
Gate Threshold Voltage
Threshold Voltage Temp. Coefficient
4.0 —
— -18
gfe Forward Transconductance
— 17
— 2.0
ICES
Collector-to-Emitter Leakage Current
— 775
IGES Gate-to-Emitter Leakage Current
VFM Diode Forward Voltage Drop
——
— 1.8
— 1.28
Max.
Units
Conditions
V VGE = 0V, IC = 100µA
V/°C VGE = 0V, IC = 1mA (25°C-175°C)
1.90
IC = 24A, VGE = 15V, TJ = 25°C
V IC = 24A, VGE = 15V, TJ = 150°C
— IC = 24A, VGE = 15V, TJ = 175°C
6.5 V VCE = VGE, IC = 700µA
— mV/°C VCE = VGE, IC = 1.0mA (25°C-175°C)
— S VCE = 50V, IC = 24A, PW = 80µs
25 µA VGE = 0V, VCE = 600V
— VGE = 0V, VCE = 600V, TJ = 175°C
±100
2.6
nA VGE = ±20V
V IF = 24A
IF = 24A, TJ = 175°C
2 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
January 20, 2015


Part Number IRGP4640D-EPbF
Description Insulated Gate Bipolar Transistor
Maker Infineon
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IRGP4640D-EPbF Datasheet PDF






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