IRGS/SL/B/P4640D/EPbF
Thermal Resistance
Parameter
Thermal Resistance Junction-to-Case (D2Pak, TO-220, TO-262)
RθJC (IGBT) Thermal Resistance Junction-to-Case (TO-247)
Thermal Resistance Junction-to-Case (D2Pak, TO-220, TO-262)
RθJC (Diode) Thermal Resistance Junction-to-Case (TO-247)
Thermal Resistance, Case-to-Sink (flat, greased surface– TO 220, D2Pak, TO-262)
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface– TO 247)
Thermal Resistance, Junction-to-Ambient (PCB Mount - D2Pak, TO-262)
RθJA Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-247)
Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-220)
Min.
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Typ.
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0.50
0.24
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Max. Units
0.60
0.60
1.53
1.62
––– °C/W
–––
40
40
62
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
V(BR)CES
Collector-to-Emitter Breakdown Voltage
ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage
600
—
—
0.30
— 1.60
VCE(on)
Collector-to-Emitter Saturation Voltage
— 1.90
— 2.0
VGE(th)
ΔVGE(th)/ΔTJ
Gate Threshold Voltage
Threshold Voltage Temp. Coefficient
4.0 —
— -18
gfe Forward Transconductance
— 17
— 2.0
ICES
Collector-to-Emitter Leakage Current
— 775
IGES Gate-to-Emitter Leakage Current
VFM Diode Forward Voltage Drop
——
— 1.8
— 1.28
Max.
—
—
Units
Conditions
V VGE = 0V, IC = 100µA
V/°C VGE = 0V, IC = 1mA (25°C-175°C)
1.90
—
IC = 24A, VGE = 15V, TJ = 25°C
V IC = 24A, VGE = 15V, TJ = 150°C
— IC = 24A, VGE = 15V, TJ = 175°C
6.5 V VCE = VGE, IC = 700µA
— mV/°C VCE = VGE, IC = 1.0mA (25°C-175°C)
— S VCE = 50V, IC = 24A, PW = 80µs
25 µA VGE = 0V, VCE = 600V
— VGE = 0V, VCE = 600V, TJ = 175°C
±100
2.6
—
nA VGE = ±20V
V IF = 24A
IF = 24A, TJ = 175°C
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January 20, 2015
