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Infineon Technologies Electronic Components Datasheet

IRLB4132PbF Datasheet

Power MOSFET

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IRLB4132PbF
Application
Optimized for UPS/Inverter Applications
Low Voltage Power Tools
Benefits
Best in Class Performance for UPS/Inverter Applications
Very Low RDS(on) at 4.5V VGS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage and Current
Lead-Free, RoHS Compliant
D
G
S
Base part number Package Type
IRLB4132PbF
TO-220AB
G
Gate
Standard Pack
Form
Tube
Quantity
50
HEXFET® Power MOSFET
VDSS
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
ID (Silicon Limited)
ID (Package Limited)
30
3.5
4.5
36
150
78A
V
m
nC
A
GDS
TO-220AB
D
Drain
S
Source
Orderable Part Number
IRLB4132PbF
Absolute Maximum Rating
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TC = 100°C
TJ
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current 
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Symbol
Parameter
RJC
Junction-to-Case 
RCS
Case-to-Sink, Flat Greased Surface
RJA
Junction-to-Ambient
Notes through are on page 8
1
Max.
30
± 20
150
100
78
620
140
68
0.90
-55 to + 175
300
10 lbf·in (1.1 N·m)
Typ.
–––
0.50
–––
Max.
1.11
–––
62
Units
V
V
A
W
W
W/°C
°C
Units
°C/W
2019-08-14


Infineon Technologies Electronic Components Datasheet

IRLB4132PbF Datasheet

Power MOSFET

No Preview Available !

IRLB4132PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VGS(th)/TJ Gate Threshold Voltage Coefficient
IDSS
Drain-to-Source Leakage Current
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
190
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
17
2.5
3.5
1.8
-7.7
–––
–––
–––
–––
–––
36
9.1
4.2
13
13
17.2
21
0.85
23
92
25
36
5110
960
440
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
––– mV/°C Reference to 25°C, ID = 1mA
3.5
4.5
m
VGS = 10V, ID = 40A
VGS = 4.5V, ID = 32A
2.35
–––
V
mV/°C
VDS = VGS, ID = 100µA
1.0
100
µA
VDS =24 V, VGS = 0V
VDS =24V,VGS = 0V,TJ =125°C
100
-100
nA
VGS = 20V
VGS = -20V
––– S VDS = 15V, ID =32A
54
–––
VDS = 15V
––– nC VGS = 4.5V
–––
ID = 32A
–––
–––
––– nC VDS = 16V, VGS = 0V
1.5 
–––
VDD = 15V
––– ns ID = 32A
–––
RG= 1.8
–––
VGS = 4.5V
–––
VGS = 0V
––– pF VDS = 15V
–––
ƒ = 1.0MHz
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy 
EAS (tested)
Single Pulse Avalanche Energy Tested Value 
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
310
900
mJ
32
A
14
mJ
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– 150
A
––– 620
MOSFET symbol
showing the
integral reverse
p-n junction diode.
––– 1.0 V TJ = 25°C,IS = 32A,VGS = 0V 
29 44 ns TJ = 25°C IF = 32A ,VDD=15V
49 74 nC di/dt = 200A/µs 
2
2019-08-14



Part Number IRLB4132PbF
Description Power MOSFET
Maker Infineon
Total Page 3 Pages
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IRLB4132PbF Datasheet PDF





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