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IRLI2910PbF
Logic –Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET
VDSS RDS(on)
ID
100V 0.026
31A
Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Full Pak eliminates the need for additional insulating hardware in commercial-industrial applications.
IRLI2910PbF Datasheet
