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IRLML0060TRPbF Datasheet Preview

IRLML0060TRPbF Datasheet

Power MOSFET

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IRLML0060TRPbF pdf
 
VDSS
VGS
RDS(on) max
(@ VGS = 10V)
RDS(on) max
(@ VGS = 4.5V)
60
±16
92
116
Applications
 Load/System Switch
V
V
m
m
IRLML0060TRPbF
HEXFET® Power MOSFET
G
Gate
Micro 3™ (SOT-23)
IRLML0060TRPbF
D
Drain
S
Source
Features
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1
Benefits
Multi-Vendor Compatibility
results in Easier Manufacturing
 Environmentally Friendlier
Increased Reliability
Base part number
IRLML0060TRPbF
Package Type
Micro 3™ (SOT-23)
Standard Pack
Form
Quantity
Tape and Reel
3000
Orderable Part Number
IRLML0060TRPbF
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
PD @TA= 25°C
Maximum Power Dissipation
PD @TA= 70°C
Maximum Power Dissipation
Linear Derating Factor
VGS
TJ
TSTG
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Max.
60
2.7
2.1
11
1.25
0.80
0.01
± 16
-55 to + 150
Units
V
A 
W
mW/°C
°C 
Thermal Resistance  
Symbol
Parameter
RJA Junction-to-Ambient
RJA Junction-to-Ambient (t < 10s)
Typ.
–––
–––
Max.
100
99
Units
°C/W
1 2016-12-20



Infineon
Infineon

IRLML0060TRPbF Datasheet Preview

IRLML0060TRPbF Datasheet

Power MOSFET

No Preview Available !

IRLML0060TRPbF pdf
  IRLML0060TRPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
60 –––
––– 0.06
––– 98
––– 78
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
1.0 –––
––– –––
––– –––
IGSS  
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– –––
––– –––
RG Internal Gate Resistance
––– 1.6
gfs Forward Trans conductance 7.6 –––
Qg Total Gate Charge
––– 2.5
Qgs Gate-to-Source Charge
––– 0.7
Qgd
Gate-to-Drain (‘Miller’) Charge
––– 1.3
td(on) Turn-On Delay Time
––– 5.4
tr Rise Time
––– 6.3
td(off) Turn-Off Delay Time
––– 6.8
tf Fall Time
––– 4.2
Ciss Input Capacitance
––– 290
Coss Output Capacitance
––– 37
Crss
Reverse Transfer Capacitance
––– 21
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
116
92
mVVGGSS
=
=
4.5V, ID = 2.2A
10V, ID = 2.7A
2.5
20
250
100
-100
V VDS = VGS, ID = 25µA
µA
VDS = 60V, VGS = 0V
VDS = 60V,VGS = 0V,TJ = 125°C
nA  
VGS = 16V
VGS = -16V
–––  
––– S VDS = 25V, ID = 2.7A
––– ID = 2.7A
––– nC   VDS = 30V
––– VGS = 4.5V
––– VDD = 30V
–––
–––
ns
ID = 1.0A
RG = 6.8
––– VGS = 4.5V
––– VGS = 0V
––– pF VDS = 25V
––– ƒ = 1.0MHz
Source-Drain Ratings and Characteristics 
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
14
13
Max. Units
Conditions
1.6
11
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
1.3 V TJ = 25°C,IS = 2.7A,VGS = 0V 
21 ns TJ = 25°C ,VR = 30V, IF = 1.6A
20 nC di/dt = 100A/µs 
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400µs; duty cycle 2%.
Surface mounted on 1 in square Cu board
Refer to application note #AN-994.
2 2016-12-20


Part Number IRLML0060TRPbF
Description Power MOSFET
Maker Infineon
Total Page 10 Pages
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IRLML0060TRPbF pdf
IRLML0060TRPbF Datasheet PDF
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