Infineon Technologies ISC030N10NM6
MOSFET
| Part No. | ISC030N10NM6 |
|---|---|
| Datasheet | ISC030N10NM6 Download |
| Manufacturer |  Infineon Technologies |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES
● N-channel, normal level● Very low on-resistance RDS(on)
● Excellent gate charge x RDS(on) product (FOM)
● Very low reverse recovery charge (Qrr)
● High avalanche energy rating
● 175°C operating temperature
● Optimized for high frequency switching and synchronous rectification
● Pb-free lead plating; RoHS compliant
● Halogen-free according to IEC61249-2-21
● MSL 1 classified according to J-STD-020 Product validation Fully qualified according to JEDEC for Industrial
APPLICATIONS
Table 1 Key Performance Parameters Parameter Value Unit VDS 100 V RDS(on),max 3.0 mΩ ID 179 A Qoss 101 nC QG(0V...10V) 55 nC Qrr (100A/µs) 56 nC TDSON-8 FL (enlarged source interconnection) 8 7 65 1 2 3 4 4 3 2 1 5 67 8 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Type / Ordering Code ISC030N10NM6 Package PG-TDSON-8 FL Marking 030N10N6 Related Links - Final Data Sheet 1 Rev. 2.2, 2023-02-14 OptiMOSTM 6 Power-Transistor, 100 V ISC030N10NM6 Table of ContentsDESCRIPTION
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