ISG0613N04NM6H
ISG0613N04NM6H is MOSFET manufactured by Infineon.
Features
- Symmetrical Half Bridge
- Optimizedforlowvoltagedrivesandbatterypoweredapplications
- Optimizedforhighperformance SMPS
- N-channel
- Verylowon-resistance RDS(on)
- Superiorthermalresistance
- 100%avalanchetested
- Pb-freeleadplating;Ro HSpliant
- Halogen-freeaccordingto IEC61249-2-21
Productvalidation
Fullyqualifiedaccordingto JEDECfor Industrial Applications
Table1Key Performance Parameters
Parameter
Value
Unit
RDS(on),max
0.88 mΩ
Qoss
76 n C
QG(0V..10V)
69 n C
PG-VITFN-10
8 9
Q1 Drain Pin 6-7
Q1 Gate Pin 5
Q2 Gate Pin 10
- 1 Q1
1 Q1 Source 2 Q1 Source 3 Q2 Drain 4 Q2 Drain
- 1 Q2
Q2 Source Pin 8-9
- 1: Internal body diode
Type/Ordering Code...
