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ITS612N1 - Smart Two Channel Highside Power Switch

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology.

Providing embedded protective functions.

Key Features

  • Product Summary Overvoltage protection Vbb(AZ) Vbb(on) Operating voltage Operating temperature Ta 43 5.0 34 -30 … +85 both V V °C channels: each parallel On-state resistance RON 200 100 mΩ Load current (ISO) 2.3 4.4 A IL(ISO) 4 4 A Current limitation IL(SCr) PG-TO220AB/7.

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Datasheet Details

Part number ITS612N1
Manufacturer Infineon
File Size 383.38 KB
Description Smart Two Channel Highside Power Switch
Datasheet download datasheet ITS612N1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PROFET® ITS612N1 Smart Two Channel Highside Power Switch For Industrial Applications • Overload protection • Current limitation • Short circuit protection • Thermal shutdown • Overvoltage protection (including load dump) • Fast demagnetization of inductive loads • Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Open drain diagnostic output • Open load detection in OFF-state • CMOS compatible input • Loss of ground and loss of Vbb protection • Electrostatic discharge (ESD) protection Features Product Summary Overvoltage protection Vbb(AZ) Vbb(on) Operating voltage Operating temperature Ta 43 5.0 ... 34 -30 … +85 both V V °C channels: each parallel On-state resistance RON 200 100 mΩ Load current (ISO) 2.3 4.