K06N60 Datasheet | Infineon

SKP06N60 SKA06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode - 75% lower Eoff pared to previous generation bined with low conduction losses - Short circuit withstand time - 10 s - Designed for: Motor controls, Inverter - NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability - Very soft, fast recovery anti-parallel Emitter Controlled Diode PG-TO-220-3-1 (TO-220AB) - Isolated TO-220, 2.5kV, 60s - Pb-free lead plating; RoHS pliant - Qualified according to JEDEC1 for target applications - plete product spectrum and PSpice Models : http://.infineon./igbt/ C G E PG-TO-220-3-31 / -111 (FullPAK) Type SKP06N60 SKA06N60 VCE IC VCE(sat) Tj Marking Package 600V 6A 2.3V 150C K06N60 PG-TO-220-3-1 600V 5A 2.3V 150C K06N60 PG-TO-220-3-31 / -111 1 J-STD-020 and JESD-022...