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K30H603 Datasheet - Infineon

IGBT

K30H603 Features

* TRENCHSTOPTM technology offering

* very low VCEsat

* low EMI

* Very soft, fast recovery anti-parallel diode

* maximum junction temperature 175°C

* qualified according to JEDEC for target applications

* Pb-free lead plating; RoHS compliant

* co

K30H603 Datasheet (1.83 MB)

Preview of K30H603 PDF

Datasheet Details

Part number:

K30H603

Manufacturer:

Infineon ↗

File Size:

1.83 MB

Description:

Igbt.
IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW30N60H3 600V high speed switching se.

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K30H603 IGBT Infineon

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