Datasheet4U Logo Datasheet4U.com

PTFB093608SV Datasheet Thermally-Enhanced High Power RF LDMOS FET

Manufacturer: Infineon

📥 Download Datasheet

General Description

The PTFB093608SV is an LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band.

Overview

PTFB093608SV Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 920 – 960.

Key Features

  • include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB093608SV Package H-37275G-6/2 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA 3GPP Drive Up VDD = 28 V, IDQ = 2.8 A, ƒ = 960 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz 21.0 60 20.5 50 20.0 Gain 19.5 40 30 19.0 20 18.5 18.0 35 Efficie.

More Datasheets from Infineon

Part Number Description
PTFB090901EA Thermally-Enhanced High Power RF LDMOS FET
PTFB090901FA Thermally-Enhanced High Power RF LDMOS FET
PTFB090901FA Thermally-Enhanced High Power RF LDMOS FET
PTFB090901FA Thermally-Enhanced High Power RF LDMOS FET
PTFB091507FH Thermally-Enhanced High Power RF LDMOS FET
PTFB091802FC Thermally-Enhanced High Power RF LDMOS FET
PTFB183404E High Power RF LDMOS Field Effect Transistors
PTFB183404F High Power RF LDMOS Field Effect Transistors
PTFB193404F Thermally-Enhanced High Power RF LDMOS FETs
PTFB201402FC High Power RF LDMOS Field Effect Transistor