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PTFB093608SV
Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 920 – 960 MHz
Description
The PTFB093608SV is an LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTFB093608SV Package H-37275G-6/2
Gain (dB) Drain Efficiency (%)
Two-carrier WCDMA 3GPP Drive Up VDD = 28 V, IDQ = 2.8 A, ƒ = 960 MHz,
3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz
21.0
60
20.5
50
20.0
Gain
19.5
40 30
19.0
20
18.5
18.0 35
Efficiency
40 45 50
Output Power Avg.
PTFB093608SV Datasheet
