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PTFB093608SV Thermally-Enhanced High Power RF LDMOS FET

PTFB093608SV Description

PTFB093608SV Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 920 * 960 MHz .
The PTFB093608SV is an LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band.

PTFB093608SV Features

* include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB093608SV Package H-37275G-6/2 Gain (dB) Drain Efficiency (%) Two-c

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Thermally-Enhanced High Power LDMOS FET Infineon
Infineon PTFB093608SV-like datasheet