PTFB193404F fets equivalent, thermally-enhanced high power rf ldmos fets.
include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon’s advanced LDMOS process, this device provides.
in the 1930 to 1990 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced pac.
The PTFB193404F is a 340‑watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless.
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