Description
The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band.
Features
- include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB213208FV Package H-34275G-6/2
IMD3, ACPR (dBc) Drain Efficiency (%)
Two-carrier WCDMA 3GPP Drive-up
VDD = 28 V, IDQ = 2.7 A, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
-25 35
-30
IMD Up -35
30 25
-40 IMD Low
-45
-50
-55
20.
PTFB213208FV Datasheet
