Part number:
PTVA035002EV
Manufacturer:
File Size:
366.93 KB
Description:
Thermally-enhanced high power rf ldmos fet.
* include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA035002EV Package H-36275-4 Gain (dB) Drain Efficiency (%) Pulsed CW Performance 450 MHz, VD
PTVA035002EV Datasheet (366.93 KB)
PTVA035002EV
366.93 KB
Thermally-enhanced high power rf ldmos fet.
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