Description
The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band.
Features
- include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA035002EV Package H-36275-4
Gain (dB) Drain Efficiency (%)
Pulsed CW Performance 450 MHz, VD = 50 V, IDQ = 0.5 A, 12 µsec pulse width, 10% duty cycle
22 85
20 Gain
18
75 65
16 55
14 Efficiency
12
45 35
10 48
a035002 gr 1
25
50 52 54 56 58 60
Output Power (dBm)
Features.
PTVA035002EV Datasheet
