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PTVA104501EH Datasheet Preview

PTVA104501EH Datasheet

Thermally-Enhanced High Power RF LDMOS FET

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PTVA104501EH pdf
PTVA104501EH
Thermally-Enhanced High Power RF LDMOS FET
450 W, 50 V, 960 – 1215 MHz
Description
The PTVA104501EH LDMOS FET is designed for use in power ampli-
fier applications in the 960 to 1215 MHz frequency band. Features
include high gain and thermally-enhanced package with bolt-down
flange. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTVA104501EH
Package H-33288-2
Power Sweep, Pulsed RF
VDD = 50 V, IDQ = 200 mA, TCASE = 25°C,
128 µs pulse width, 10% duty cycle
65
Output power
Efficiency
55
65
55
45 45
35
960 MHz
35
1030 Mhz
25 1090 MHz 25
1150 MHz
1215 MHz
15
a104501eh_g1
15
28 30 32 34 36 38 40 42 44
PIN (dBm)
Features
Broadband internal input and output matching
High gain and efficiency
Integrated ESD protection
Human Body Model Class 2 (per ANSI/ESDA/
JEDEC JS-001)
Low thermal resistance
Excellent ruggedness
Pb-free and RoHS compliant
Capable of withstanding a 10:1 load mismatch
(all phase angles) at 450 W peak under RF pulse,
128 µS, 10% duty cycle.
RF Characteristics
Pulsed RF Performance (tested in Infineon test fixture) (tested in Infineon test fixture)
VDD = 50 V, IDQ = 200 mA, POUT = 450 W (peak), ƒ1 = 960 MHz, ƒ2 = 1090 MHz, ƒ3 = 1215 MHz, RF pulse 128 µs,
10% duty cycle
Characteristic
Gain
Drain Efficiency
Gain Flatness
Return Loss
Symbol
Gps
hD
DG
IRL
Min
16.5
53
Typ
17.5
58
0.85
–9.5
Max
1.8
–6
Unit
dB
%
dB
dB
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 02.1, 2016-04-19



Infineon
Infineon

PTVA104501EH Datasheet Preview

PTVA104501EH Datasheet

Thermally-Enhanced High Power RF LDMOS FET

No Preview Available !

PTVA104501EH pdf
PTVA104501EH
RF Characteristics
Typical RF Performance (not subject to production test, verified by design/characterization in Infineon test fixture)
VDD = 50 V, IDQ = 200 mA, Input signal (tr = 7.0 ns, tf = 7.0 ns), 128 µs pulse width, 10% duty cycle, class AB test
Mode of
Operation
ƒ IRL
(MHz) (dB)
Gain
(dB)
P1dB
Eff POUT Gain
(%) (W) (dB)
P3dB
Eff POUT
(%) (W)
Max
Pdroop (pulse)
@ P1dB
tr (ns)
@P1dB
128 µs, 10%
960 –7.5 18.0 56
460 16.0 53
490
0.15
5
1030 –13.0 18.5 59
470 16.5 60
540
0.15
5
1090 –8.0 17.8 61
510 15.8 61
590
0.20
5
1150 –15.0 18.1 59
540 16.1 60
620
0.20
5
1215 –9.0 18.3 56
460 16.3 53
510
0.20
5
tf (ns)
@P1dB
<2
<2
<2
<2
<2
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA
VDS = 50 V, VGS = 0 V
VDS = 111 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
VDS = 50 V, IDQ = 200 mA
VGS = 10 V, VDS = 0 V
Symbol
V(BR)DSS
IDSS
IDSS
RDS(on)
VGS
IGSS
Min
105
3.0
Typ
0.1
3.5
Max
1
10
4.0
1
Unit
V
µA
µA
W
V
µA
Maximum Ratings
Parameter
Symbol Value
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Junction Temperature
TJ
Storage Temperature Range
TSTG
Thermal Resistance
RqJC
(TCASE = 70°C, 430 W CW, ƒ = 1090 MHZ, VDD = 50 V, IDQ = 200 mA)
105
–6 to +12
200
–65 to +150
0.25
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTVA104501EH V1 R0
PTVA104501EH V1 R250
Order Code
PTVA104501EHV1R0XTMA1
PTVA104501EH V1R250XTMA1
Package Description
H-33288-2, earless flange
H-33288-2, earless flange
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Data Sheet
2 of 9
Rev. 02.1, 2016-04-19


Part Number PTVA104501EH
Description Thermally-Enhanced High Power RF LDMOS FET
Maker Infineon
Total Page 9 Pages
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