Part number:
PTVA127002EV
Manufacturer:
File Size:
518.11 KB
Description:
Thermally-enhanced high power rf ldmos fet.
* include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA127002EV Package H-36275-4 POUT (dBm) Drain Efficiency (%) Power Sweep, Pulsed RF VDD = 50
PTVA127002EV Datasheet (518.11 KB)
PTVA127002EV
518.11 KB
Thermally-enhanced high power rf ldmos fet.
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