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PXAC180602MD - Thermally-Enhanced High Power RF LDMOS FET

General Description

The PXAC180602MD is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.

Key Features

  • include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC180602MD Package PG-HB1DSO-4-1 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 80 mA, ƒ = 1880 MHz 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 Efficiency 20 75 50 16 Gain 25 12 0 8 PAR @ 0.01% CCDF 4 -2.

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Datasheet Details

Part number PXAC180602MD
Manufacturer Infineon
File Size 393.19 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PXAC180602MD Datasheet

Full PDF Text Transcription for PXAC180602MD (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PXAC180602MD. For precise diagrams, and layout, please refer to the original PDF.

PXAC180602MD Thermally-Enhanced High Power RF LDMOS FET 60 W, 28 V, 1805 – 1880 MHz Description The PXAC180602MD is a 60-watt LDMOS FET with an asymmetrical design intend...

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PXAC180602MD is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC180602MD Package PG-HB1DSO-4-1 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 80 mA, ƒ = 1880 MHz 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 Efficiency 20

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