Description
The PXAC182002FC is a 180-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.
Features
- include dual-path design, input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC182002FC Package H-37248-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 400 mA, ƒ = 1880 MHz,
3GPP WCDMA signal,
PAR = 10 dB, 3.84 MHz BW
24
Efficiency
20
60 40
16 20
Gain
12 0
8 PAR @ 0.01% CCDF.
PXAC182002FC-Infineon.pdf
