• Part: PXAC260622SC
  • Description: Thermally-Enhanced High Power RF LDMOS FET
  • Manufacturer: Infineon
  • Size: 391.54 KB
Download PXAC260622SC Datasheet PDF
Infineon
PXAC260622SC
Description The PXAC260622SC is a 75-watt LDMOS FET with an asymetric design for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. It features dual-path design, input and output matching, and a thermally-enhanced, surface-mount package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC260622SC Package H-37248H-4 with formed leads Peak/Average Ratio, Gain (d B) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 115 m A, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 10 d B, 3.84 MHz BW 24 20 Efficiency 75 50 16 25 Gain 12 0 8 PAR @ 0.01% CCDF 4 -25 -50 Features - Broadband internal input and output matching - Asymmetrical Doherty design - Main: 25 W Typ (P1d B) - Peak: 50 W Typ (P1d B) - Typical pulsed performance in a Doherty configuration, at 39.5 d B POUT, 2690 MHz, 28 V, with pulse 10 µs, 10% DC - Gain = 16d B -...