PXAC260622SC - Thermally-Enhanced High Power RF LDMOS FET

Infineon

PXAC260622SC Datasheet Preview — Preview of PXAC260622SC PDF

Datasheet Details

Part number	PXAC260622SC
Manufacturer	Infineon ↗
File Size	391.54 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PXAC260622SC-Infineon.pdf

PXAC260622SC Product details

Description

The PXAC260622SC is a 75-watt LDMOS FET with an asymetric design for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band.

Features

dual-path design, input and output matching, and a thermally-enhanced, surface-mount package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC260622SC Package H-37248H-4 with formed leads Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 115 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 20 Efficiency 75 50 16 25 Gain 12 0 8.

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Published: Jan 26, 2016 |