• Part: PXAC261002FC
  • Description: Thermally-Enhanced High Power RF LDMOS FET
  • Manufacturer: Infineon
  • Size: 158.01 KB
PXAC261002FC Datasheet (PDF) Download
Infineon
PXAC261002FC

Description

The PXAC261002FC is a 100-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. Features include dual-path design, high gain and a thermally-enhanced package with earless flanges.

Key Features

  • Broadband internal input and output matching
  • Asymmetric design - Main: P1dB = 40 W Typ - Peak: P1dB = 70 W Typ