Description
The PXAC261002FC is a 100-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band.
Features
- include dual-path design, high gain and a thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC261002FC Package H-37248-4
Gain (dB) Drain Efficiency (%)
Two-carrier WCDMA Drive-up
VDD = 26 V, IDQ = 210 mA, VGS1 = 2.62 V, ƒ = 2590 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz, Doherty Fixture 17 60
16 Gain
15
50 40
14 30
13 20
12 Efficie.
PXAC261002FC Datasheet
