PXAC261002FC fet equivalent, thermally-enhanced high power rf ldmos fet.
include dual-path design, high gain and a thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excelle.
in the 2496 to 2690 MHz frequency band. Features include dual-path design, high gain and a thermally-enhanced package wi.
The PXAC261002FC is a 100-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. Features include dual-path design, high gain and a thermally-enhanced .
Image gallery
Download