PXAC261212FC fet equivalent, thermally-enhanced high power rf ldmos fet.
dual-path design, input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provid.
in the 2496 to 2690 MHz frequency band. It features dual-path design, input and output matching, and a thermally-enhance.
The PXAC261212FC is a 120-watt LDMOS FET with an asymmetric designed for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. It features dual-path design, input and output matching, and a thermally-enha.
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