S26KS256S Key Features
- 3.0 V I/O, 11 bus signals
- Single ended clock
- 1.8 V I/O, 12 bus signals
- Differential clock (CK, CK#)
- Chip Select (CS#)
- 8-bit data bus (DQ[7:0])
- Read-write data strobe (RWDS)
- HYPERFLASH™ memories use RWDS only as a Read Data Strobe
- Up to 333-MBps sustained read throughput
- DDR: two data transfers per clock