S26KS512S Datasheet | Infineon

S26KL512S, S26KS512S, S26KL256S, S26KS256S, S26KL128S, S26KS128S 512 Mb (64 MB) / 256 Mb (32 MB) / 128 Mb (16 MB) HYPERFLASH™ family HYPERBUS™, 3.0 V / 1.8 V Features - 3.0 V I/O, 11 bus signals - Single ended clock - 1.8 V I/O, 12 bus signals - Differential clock (CK, CK#) - Chip Select (CS#) - 8-bit data bus (DQ[7:0]) - Read-write data strobe (RWDS) - HYPERFLASH™ memories use RWDS only as a Read Data Strobe - Up to 333-MBps sustained read throughput - DDR: two data transfers per clock - 166-MHz clock rate (333 MBps) at 1.8 V VCC - 100-MHz clock rate (200 MBps) at 3.0 V VCC - 96-ns initial random read access time - Initial random access read latency: 5 to 16 clock cycles - Sequential...