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SIGC101T170R3E - IGBT

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General Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) 2.1 Change wafer size to 200 mm 2.2 Additional basic type L7777M, L7777T, L7777E; new gate pad desi

Overview

SIGC101T170R3E IGBT3 Power Chip.

Key Features

  • 1700V Trench & Field Stop technology.
  • low turn-off losses.
  • short tail current.
  • positive temperature coefficient.
  • easy paralleling This chip is used for:.
  • power modules.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Infineon Technologies Logo SIGC101T170R3 IGBT Infineon Technologies

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