SIGC101T170R3E - IGBT

Infineon

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Datasheet Details

Part number	SIGC101T170R3E
Manufacturer	Infineon
File Size	168.97 KB
Description	IGBT
Datasheet	SIGC101T170R3E-Infineon.pdf

SIGC101T170R3E Product details

Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) 2.1 Change wafer size to 200 mm 2.2 Additional basic type L7777M, L7777T, L7777E; new gate pad design Date 14.04.2010 01.07.2014 Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG All Rights Reserved.Legal Disclaimer The information given in this documen

Features

1700V Trench & Field Stop technology.
low turn-off losses.
short tail current.
positive temperature coefficient.
easy paralleling This chip is used for:.
power modules.

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Published: Feb 14, 2016 |