SIGC158T120R3LE igbt equivalent, igbt.
* 1200V Trench & Field Stop technology
* low turn-off losses
* short tail current
* positive temperature coefficient
* easy paralleling
This chip is.
* drives
Chip Type
VCE
IC
Die Size
SIGC158T120R3LE 1200V 150A 12.56 x 12.56 mm2
C
G E
Package sawn on foil
M.
AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883
Revision History Version
Subjects (major changes since last revision)
2.0 Release of final datasheet, change wafer size.
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