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SIGC158T120R3LE - IGBT

General Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) 2.0 Release of final datasheet, change wafer size to 200 mm 2.1 Additional basic types L7698N, L769

Overview

SIGC158T120R3LE IGBT3 Power Chip.

Key Features

  • 1200V Trench & Field Stop technology.
  • low turn-off losses.
  • short tail current.
  • positive temperature coefficient.
  • easy paralleling This chip is used for:.
  • power modules.