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SIGC68T170R3E - IGBT

General Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version 2.1 2.2 Subjects (major changes since last revision) Change wafer size to 200 mm Additional basic types L7761M, L7761T, L7761E Published by Infi

Overview

SIGC68T170R3E IGBT3 Power Chip.

Key Features

  • 1700V Trench & Field Stop technology.
  • low turn-off losses.
  • short tail current.
  • positive temperature coefficient.
  • easy paralleling This chip is used for:.
  • power modules.