TLF12505 Datasheet | Infineon

Features - Integrated driver, control MOSFET Q1 and synchronous MOSFET Q2 - On-chip MOSFET Current sensing and reporting at 5u A/A. - Input voltage (VIN) range of 4.25 V to 20 V - VCC and VDRV supply of 4.9 V to 5.5 V - Output voltage range from 0.225 V up to 5.5 V at VIN = 12 V - Output current capability of 60 A - Operation up to 2 MHz - VDRV under voltage lockout (UVLO) - Bootstrap under-voltage protection and flag - 8m V / °C temperature analog output - Over temperature protection flag and thermal shutdown - Cycle-by-cycle over current protection (OCP) and flag - Cycle-by-cycle negative over current protection (NOCP) - Control MOSFET short (HSS) detection and flag - Auto-replenishment on bootstrap capacitor - patible with 3.3V and 5 V tri-state PWM Input - DEEP SLEEP mode for power saving via EN= low (32 µA typ.) - Small 5 mm x 6 mm x 0.9 mm PQFN package - Lead free Ro HS pliant package - pliant to automotive AEC-Q100 Rev H Grade 1 requirements Potential applications - Automotive puting (ADAS/AD, Cockpit etc.) - DDR memory Description - Qualified for automotive applications requiring AEC-Q100 Rev H Grade 1 pliance - High frequency, low profile DC-DC converters The TLF12505 integrated power-stage contains a low quiescent current synchronous buck gate-driver IC which is co-packed with control and synchronous MOSFETs. The package is optimized for PCB layout, heat transfer, driver/MOSFET control timing, and minimal switch node ringing when layout guidelines are followed. The paired gate driver and MOSFET bination enables higher efficiency at lower output voltages required by cutting edge CPU, GPU, and DDR memory designs. Datasheet .infineon. Please read the Important Notice and Warnings at the end of this document page 1 of 25 V 2.1 2024-01-30 Automotive 60A Optimos TM Powerstage TLF12505 Table of Contents The internal MOSFET sensing achieves superior current sense accuracy vs. best-in-class controller-based Inductor DCR sense methods. Protection includes IC...