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Infineon Technologies Electronic Components Datasheet

03N60C3 Datasheet

SPP03N60C3 / SPD03N60C3 / SPA03N60C3

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Final data
SPP03N60C3, SPB03N60C3
SPA03N60C3
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
VDS @ Tjmax
RDS(on)
ID
650
1.4
3.2
V
A
Periodic avalanche rated
P-TO220-3-31 P-TO263-3-2 P-TO220-3-1
www.DataSheet4UE.cxotmreme dv/dt rated
High peak current capability
Improved transconductance
P-TO220-3-31
3
12
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP03N60C3
SPB03N60C3
SPA03N60C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4401
P-TO263-3-2 Q67040-S4391
P-TO220-3-31 -
Marking
03N60C3
03N60C3
03N60C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=2.4A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=3.2A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
Value
SPP_B SPA
3.2 3.21)
2 21)
9.6 9.6
100 100
0.2 0.2
3.2 3.2
±20 ±20
±30 ±30
38 29.7
-55...+150
Unit
A
A
mJ
A
V
W
°C
Page 1
2003-10-02


Infineon Technologies Electronic Components Datasheet

03N60C3 Datasheet

SPP03N60C3 / SPD03N60C3 / SPA03N60C3

No Preview Available !

Final data
SPP03N60C3, SPB03N60C3
SPA03N60C3
Maximum Ratings
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 3.2 A, Tj = 125 °C
Thermal Characteristics
www.DataSheePt4Ua.rcaommeter
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s 4)
Symbol
dv/dt
Value
50
Unit
V/ns
Symbol
RthJC
RthJC_FP
RthJA
RthJA_FP
RthJA
Tsold
min.
-
-
-
-
Values
typ. max.
- 3.3
- 4.1
- 62
- 80
Unit
K/W
- - 62
- 35 -
- - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
min.
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
V(BR)DSS VGS=0V, ID=0.25mA
V(BR)DS VGS=0V, ID=3.2A
600
-
Gate threshold voltage
Zero gate voltage drain current
VGS(th)
I DSS
Gate-source leakage current
I GSS
Drain-source on-state resistance RDS(on)
Gate input resistance
RG
ID=135µA, VGS=VDS
VDS=600V, VGS=0V,
Tj=25°C
Tj=150°C
VGS=30V, VDS=0V
VGS=10V, ID=2A
Tj=25°C
Tj=150°C
f=1MHz, open drain
2.1
-
-
-
-
-
-
Values
typ.
-
700
3
0.5
-
-
1.26
3.8
10
max.
-
-
3.9
1
70
100
1.4
-
-
Unit
V
µA
nA
Page 2
2003-10-02


Part Number 03N60C3
Description SPP03N60C3 / SPD03N60C3 / SPA03N60C3
Maker Infineon Technologies
Total Page 14 Pages
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