IPD05N03LA G IPF05N03LA G
IPS05N03LA G IPU05N03LA G
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
www.DataSheet4U.com
minimal footprint
6 cm2 cooling area5)
-
-
-
- 1.6 K/W
- 75
- 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=50 µA
I DSS
V DS=25 V, V GS=0 V,
T j=25 °C
25
1.2
-
-
1.6
0.1
-V
2
1 µA
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V DS=25 V, V GS=0 V,
T j=125 °C
I GSS
R DS(on)
V GS=20 V, V DS=0 V
V GS=4.5 V, I D=30 A
V GS=4.5 V, I D=30 A,
SMD version
V GS=10 V, I D=30 A
V GS=10 V, I D=30 A,
SMD version
RG
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
-
-
-
-
-
-
-
31
10 100
10 100 nA
6.9 8.6 mΩ
6.7 8.4
4.4 5.3
4.2 5.1
1 -Ω
62 - S
1) J-STD20 and JESD22
2) Current is limited by bondwire; with an R thJC=1.6 K/W the chip is able to carry 106 A.
3) See figure 3
4) T j,max=150 °C and duty cycle D <0.25 for V GS<-5 V
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.0
page 2
2006-05-11
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