13N03LA Datasheet | Infineon

.. IPD13N03LA IPU13N03LA Opti MOS®2 Power-Transistor Features - Ideal for high-frequency dc/dc converters - Qualified according to JEDEC for target applications - N-channel - Logic level - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance R DS(on) - Superior thermal resistance - 175 °C operating temperature - dv /dt rated 1) Product Summary V DS R DS(on),max (SMD version) ID 25 13 30 V mΩ A P-TO252-3-11 P-TO251-3-21 Type IPD13N03LA IPU13N03LA Package P-TO252-3-11 P-TO251-3-21 Ordering Code Q67042-S4159 Q67042-S4160 Marking 13N03LA 13N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 30 30 210 60 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C3) I D=24 A, R GS=25 Ω I D=30 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C m J k V/µs V W °C T C=25 °C 46 -55 ... 175 55/175/56 J-STD20 and...