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Infineon Technologies Electronic Components Datasheet

2N03L05 Datasheet

Power-Transistor

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OptiMOS® Power-Transistor
Feature
N-Channel
Enhancement mode
Logic Level
Excellent Gate Charge x RDS(on)
product (FOM)
Superior thermal resistance
175°C operating temperature
Avalanche rated
dv/dt rated
P- TO262 -3-1
SPI80N03S2L-05
SPP80N03S2L-05,SPB80N03S2L-05
Product Summary
VDS
RDS(on)
ID
30 V
5.2 m
80 A
P- TO263 -3-2
P- TO220 -3-1
Type
SPP80N03S2L-05
SPB80N03S2L-05
SPI80N03S2L-05
Package
P- TO220 -3-1
P- TO263 -3-2
P- TO262 -3-1
Ordering Code
Q67042-S4033
Q67042-S4032
Q67042-S4093
Marking
2N03L05
2N03L05
2N03L05
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current 1)
TC=25°C
ID
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=80 A , VDD=25V, RGS=25
Repetitive avalanche energy, limited by Tjmax2)
Reverse diode dv/dt
IS=80A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
80
80
320
325
16
6
±20
167
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-04-24


Infineon Technologies Electronic Components Datasheet

2N03L05 Datasheet

Power-Transistor

No Preview Available !

Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
SPI80N03S2L-05
SPP80N03S2L-05,SPB80N03S2L-05
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
- 0.6 0.9 K/W
- - 62
- - 40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
Gate threshold voltage, VGS = VDS
ID=110µA
Zero gate voltage drain current
VDS=30V, VGS=0V, Tj=25°C
VDS=30V, VGS=0V, Tj=125°C
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=4.5V, ID=55A
VGS=4.5V, ID=55A, SMD version
Drain-source on-state resistance4)
VGS=10V, ID=55A
VGS=10V, ID=55A, SMD version
V(BR)DSS 30
VGS(th)
1.2
-
1.6
-V
2
IDSS
IGSS
µA
- 0.01 1
- 10 100
- 1 100 nA
RDS(on)
m
- 5.6 7.5
- 5.2 7.2
RDS(on)
-
4 5.2
- 3.7 4.9
1Current limited by bondwire ; with an RthJC = 0.9K/W the chip is able to carry ID= 139A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4Diagrams are related to straight lead versions
Page 2
2003-04-24


Part Number 2N03L05
Description Power-Transistor
Maker Infineon Technologies
Total Page 8 Pages
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